Depth Profiling of As in an AlAs/GaAs Multilayer by a New Laser-Induced Sputtered Neutral Mass Spectrometry System
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Improvement of ionization yield in sputtered neutral mass spectrometry using pulsed infrared and ultraviolet lasers;Journal of Vacuum Science & Technology B;2020-05
2. Matrix and element dependences of useful yield in Si and SiO2 matrices using laser-ionization sputtered neutral mass spectrometry;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2018-05
3. Matrix effect-free depth profiling of implanted Mg in Al x Ga1-x As/GaAs multi-layers by resonance enhanced multiphoton laser post-ionization sputtered neutral mass spectrometry;Surface and Interface Analysis;2012-02-24
4. Quantitative depth profiling by laser-ionization sputtered neutral mass spectrometry;Spectrochimica Acta Part B: Atomic Spectroscopy;1999-01
5. A quantification method in laser-ionization sputtered neutral mass spectrometry with a large acceptance volume of photoion detection;International Journal of Mass Spectrometry and Ion Processes;1997-10
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