Germanium diffusion in polysilicon emitters of SiGe heterojunction bipolar transistors fabricated by germanium implantation
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1518770
Reference8 articles.
1. SiGe-HBTs for mobile communication
2. Si/GexSi/sub 1-x/ heterojunction bipolar transistors with the GexSi/sub 1-x/ base formed by Ge ion implantation in Si
3. Investigations by SIMS of the bulk impurity diffusion of Ge in Si
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1. MODEL OF β-FeSi2 NANOCRYSTALLITE “EMERSION” PROCESS DURING SILICON LAYER OVERGROWTH;Physics, Chemistry and Applications of Nanostructures;2013-06
2. A low-cost method of forming epitaxy SiGe on Si substrate by laser annealing;Applied Physics Letters;2009-02-23
3. Redistribution of Implanted Species in Polycrystalline Silicon Films on Silicon Substrate;Defect and Diffusion Forum;2007-04
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