A low-cost method of forming epitaxy SiGe on Si substrate by laser annealing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3086881
Reference17 articles.
1. Si/SiGe heterostructures: from material and physics to devices and circuits
2. Relaxed GexSi1−x structures for III–V integration with Si and high mobility two-dimensional electron gases in Si
3. Annealing of ultrashallow p+/n junction by 248 nm excimer laser and rapid thermal processing with different preamorphization depths
4. Laser-induced Ni(Ti) silicide formation
5. Melting Temperature and Explosive Crystallization of Amorphous Silicon during Pulsed Laser Irradiation
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1. Materials science issues related to the fabrication of highly doped junctions by laser annealing of Group IV semiconductors;Laser Annealing Processes in Semiconductor Technology;2021
2. Investigation of recrystallization and stress relaxation in nanosecond laser annealed Si1−xGex/Si epilayers;Applied Surface Science;2020-10
3. Laser-Driven Phase Segregation and Tailoring of Compositionally Graded Microstructures in Si–Ge Nanoscale Thin Films;ACS Applied Materials & Interfaces;2020-02-03
4. Impact of UV Nanosecond Laser Annealing on Composition and Strain of Undoped Si0.8Ge0.2 Epitaxial Layers;ECS Journal of Solid State Science and Technology;2019
5. Composition and Strain Evolution of Undoped Si0.8Ge0.2 Layers Submitted to UV-Nanosecond Laser Annealing;ECS Transactions;2018-07-20
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