MODEL OF β-FeSi2 NANOCRYSTALLITE “EMERSION” PROCESS DURING SILICON LAYER OVERGROWTH-Reference-Cited by-同舟云学术

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MODEL OF β-FeSi2 NANOCRYSTALLITE “EMERSION” PROCESS DURING SILICON LAYER OVERGROWTH

Published:2013-06 Issue: Volume: Page:
ISSN:
Container-title:Physics, Chemistry and Applications of Nanostructures
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Author:

GALKIN N. G.¹²,CHUSOVITIN E. A.¹²,SHEVLYAGIN A. V.¹²,DOTSENKO S. A.¹²,GOROSHKO D. L.¹²,SHAMIRZAEV T. S.³,GUTAKOVSKII A. K.³

Affiliation:

1. Institute of Automation and Control Processes FEB RAS, Radio Str. 5, 690041 Vladivostok, Russia

2. Institute of Physics and Information Technology, Far Eastern Federal University, Suhanova Str. 8, 690950 Vladivostok, Russia

3. Rzhanov Institute of Semiconductor Physics SO RAS, Lavrentiev Ave. 13, 630090 Novosibirsk, Russia

Publisher

WORLD SCIENTIFIC

Reference9 articles.

1. Recent advances in thermoelectric nanocomposites

2. Effects of P doping on the thermoelectric properties of β-FeSi2

3. Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes

4. Migration of CrSi2 nanocrystals through nanopipes in the silicon cap

5. Growth, structure and luminescence properties of multilayer Si/β-FeSi2NCs/Si/…/Si nanoheterostructures

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