Schottky contact formation on polar and non-polar AlN-Reference-Cited by-同舟云学术

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Schottky contact formation on polar and non-polar AlN

Published:2014-11-21 Issue:19 Volume:116 Page:194503
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Reddy Pramod¹^ORCID,Bryan Isaac¹,Bryan Zachary¹,Tweedie James¹,Kirste Ronny¹,Collazo Ramon¹,Sitar Zlatko¹

Affiliation:

1. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695-7919, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Defense Advanced Research Projects Agency

Advanced Research Projects Agency - Energy

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/am-pdf/10.1063/1.4901954

Reference27 articles.

1. Nitride Semiconductor Devices

2. Strain in Si doped GaN and the Fermi level effect

3. Ni/Au Schottky diodes on AlxGa1-xN (0.7

4. A review of the metal–GaN contact technology

5. Metal contacts to gallium nitride

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1. Semipolar (11–22) AlN Films Grown by Hydride Vapor Phase Epitaxy for Schottky Barrier Diodes;Crystal Growth & Design;2024-04-19

2. Demonstration of near-ideal Schottky contacts to Si-doped AlN;Applied Physics Letters;2023-10-23

3. Mg implantation in AlN layers on sapphire substrates;Japanese Journal of Applied Physics;2023-02-01

4. Natural band alignment of BAlN and BGaN alloys;Journal of Physics D: Applied Physics;2022-09-20

5. High-Temperature Performance of AlN MESFETs With Epitaxially Grown n-Type AlN Channel Layers;IEEE Electron Device Letters;2022-03

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