Theoretical investigation of InAs/GaSb type-II pin superlattice infrared detector in the mid wavelength infrared range
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4793787
Reference15 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Infrared imaging with InAs/GaSb type-II superlattices
3. InAs/GaSb superlattices for advanced infrared focal plane arrays
4. A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement
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1. Voltage tunable terahertz QWIP containing asymmetric step-like coupled double quantum wells;Optical and Quantum Electronics;2022-02
2. Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors;Journal of Physics D: Applied Physics;2021-06-11
3. The detailed analysis of wavefunction overlaps for InAs/AlSb/GaSb based N-structure type-II SL pin photodetectors;Physica Scripta;2019-04-26
4. The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface;Semiconductor Science and Technology;2018-07-25
5. Insight into the split and asymmetry of charge distribution in biased M-structure superlattice;Applied Physics Letters;2017-07-31
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