A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3529940
Reference19 articles.
1. 256×256 focal plane array midwavelength infrared camera based on InAs/GaSb short-period superlattices
2. High-Performance Focal Plane Array Based on InAs–GaSb Superlattices With a 10-$\mu{\hbox {m}}$ Cutoff Wavelength
3. Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
4. nBn structure based on InAs∕GaSb type-II strained layer superlattices
5. A high-performance long wavelength superlattice complementary barrier infrared detector
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