Effects of interface-roughness scattering on nonlinear electron transport in a superlattice based on exact solution of generalized Boltzmann transport equation
Author:
Funder
Air Force Office of Scientific Research
Air Force Research Laboratory
Publisher
American Physical Society (APS)
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.108.165304/fulltext
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1. InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
2. Third-generation infrared photodetector arrays
3. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
4. Passivation of InAs∕(GaIn)Sb short-period superlattice photodiodes with 10μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1−y
5. Background limited long wavelength infrared type-II InAs/GaSb superlattice photodiodes operating at 110 K
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1. Controlling interplay between weak localization and interface-roughness scattering of electrons in nonlinear transport within a superlattice;Physical Review B;2024-08-16
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