Evaluation of the optical characteristics of a type-II InAs/GaSb superlattice infrared p–i–n photodetector
Author:
Funder
JSPS KAKENHI
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Link
http://iopscience.iop.org/article/10.7567/1347-4065/ab2b67/pdf
Reference27 articles.
1. Growth of type II strained layer superlattice, bulk InAs and GaSb materials for minority lifetime characterization
2. InAs/GaSb type-II superlattice infrared detectors: Future prospect
3. Interface-induced suppression of the Auger recombination in type-II InAs/GaSb superlattices
4. A type-II superlattice period with a modified InAs to GaSb thickness ratio for midwavelength infrared photodiode performance improvement
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1. SRIM simulation of irradiation damage by protons in InAs/GaSb type-II superlattices;Journal of the Korean Physical Society;2023-01-03
2. Optoelectronic Transport Properties of Nanostructured Multi-Quantum Well InAs/GaSb Type II LWIR and MWIR Detectors;Journal of Electronic Materials;2022-09-21
3. Towards high sensitivity infrared detector using Cu2CdxZn1-xSnSe4 thin film by SCAPS simulation;Solar Energy;2021-09
4. Carrier localization and miniband modeling of InAs/GaSb based type-II superlattice infrared detectors;Journal of Physics D: Applied Physics;2021-06-11
5. High-performance midwavelength infrared detectors based on InAsSb nBn design*;Chinese Physics B;2020-06-01
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