The investigation of quantum efficiency constituents of InAs/AlSb/GaSb based N structure type-II SL photodetectors with InAlAs interface
Author:
Publisher
IOP Publishing
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Link
http://stacks.iop.org/0268-1242/33/i=9/a=094001/pdf
Reference22 articles.
1. Barrier infrared detectors
2. High operating temperature midwave infrared photodiodes and focal plane arrays based on type-II InAs/GaSb superlattices
3. Effect of contact doping in superlattice-based minority carrier unipolar detectors
4. InAs/GaSb type-II short-period superlattices for advanced single and dual-color focal plane arrays
5. High operation temperature mid-wavelength interband cascade infrared photodetectors grown on InAs substrate
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1. Emerging Type‐II Superlattices of InAs/InAsSb and InAs/GaSb for Mid‐Wavelength Infrared Photodetectors;Advanced Photonics Research;2021-12-15
2. Optical gain enhancement and wavefunction confinement tuning in AlSb/InGaAsP/GaAsSb heterostructures;The European Physical Journal B;2021-06
3. Quantum efficiency contributions for type-II InAs/GaSb SL photodetectors;Physica E: Low-dimensional Systems and Nanostructures;2021-06
4. Resonant cavity enhanced heterojunction phototransistors based on type-II superlattices;Infrared Physics & Technology;2021-03
5. Theoretical analysis on the energy band properties of N- and M-structure type-II superlattices;Superlattices and Microstructures;2020-09
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