Effect of contact doping in superlattice-based minority carrier unipolar detectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3613927
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1. Theory of a Wide-Gap Emitter for Transistors
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5. nBn structure based on InAs∕GaSb type-II strained layer superlattices
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