Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes-Reference-Cited by-同舟云学术

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Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes

Published:2006-09-18 Issue:12 Volume:89 Page:121114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vurgaftman I.,Aifer E. H.,Canedy C. L.,Tischler J. G.,Meyer J. R.,Warner J. H.,Jackson E. M.,Hildebrandt G.,Sullivan G. J.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2356697

Reference12 articles.

1. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes

2. Passivation of InAs∕(GaIn)Sb short-period superlattice photodiodes with 10μm cutoff wavelength by epitaxial overgrowth with AlxGa1−xAsySb1−y

3. Ammonium sulfide passivation of Type-II InAs/GaSb superlattice photodiodes

4. On the performance and surface passivation of type II InAs∕GaSb superlattice photodiodes for the very-long-wavelength infrared

5. 2004 Military Sensing Symposia Specialty Groups on Materials;Aifer E. H.,2004

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2. Effect of “M” and “B” superlattice barrier layers on dark current of long-wavelength infrared detectors;Materials Science in Semiconductor Processing;2024-04

3. Antimony-based Type-II superlattice infrared detectors: An overview;Reference Module in Materials Science and Materials Engineering;2024

4. Dark Current Analysis of InAs/GaSb Type II Superlattice Infrared Detectors;IEEE Transactions on Electron Devices;2023-11

5. Mid-wavelength InAs/GaSb type-II superlattice barrier detector with nBn design and M barrier;Optoelectronics Letters;2023-10

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