Proposal of leak path passivation for InGaN solar cells to reduce the leakage current-Reference-Cited by-同舟云学术

Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

Published:2016-01-25 Issue:4 Volume:108 Page:042108
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wang Ke¹,Imai Daichi¹^ORCID,Kusakabe Kazuhide¹,Yoshikawa Akihiko¹²

Affiliation:

1. Center for SMART Green Innovation Research, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522, Japan

2. Department of Information and Communication Engineering, Graduate School of Engineering, Kogakuin University, Nakano-cho, Hachioji, Tokyo 2665-1, Japan

Funder

Japan Society for the Promotion of Science (JSPS)

Japan Science and Technology Agency (JST)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference23 articles.

1. W. Walukiewicz , K. M. Yu , J. Wu , and W. J. Schaff , “ Broad spectrum solar cells,” U.S. patent 7,217,882 B2 (27 May 2003).

2. When group-III nitrides go infrared: New properties and perspectives

3. Proposal for realizing high-efficiency III-nitride semiconductor tandem solar cells with InN/GaN superstructure magic alloys fabricated at raised temperature (SMART)

4. Correlation between Device Performance and Defects in GaInN-Based Solar Cells

5. High performance thin quantum barrier InGaN/GaN solar cells on sapphire and bulk (0001) GaN substrates

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1. Dynamic Atomic Layer Epitaxy of InN on/in GaN and Its Application for Fabricating Ordered Alloys in Whole III-N System;Semiconductors and Semimetals;2017

2. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Impact of excess In-atoms at high growth temperature;Journal of Applied Physics;2016-12-15

3. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature;Journal of Applied Physics;2016-12-08

4. Leak path passivation by in situ Al-N for InGaN solar cells operating at wavelengths up to 570 nm;Applied Physics Letters;2016-02-29