Proposal for realizing high-efficiency III-nitride semiconductor tandem solar cells with InN/GaN superstructure magic alloys fabricated at raised temperature (SMART)-Reference-Cited by-同舟云学术

Proposal for realizing high-efficiency III-nitride semiconductor tandem solar cells with InN/GaN superstructure magic alloys fabricated at raised temperature (SMART)

Published:2014-03-08 Issue: Volume: Page:
ISSN:0277-786X
Container-title:SPIE Proceedings
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Author:

Kusakabe Kazuhide,Yoshikawa Akihiko

Publisher

SPIE

Reference20 articles.

1. Finite element simulations of compositionally graded InGaN solar cells

2. When group-III nitrides go infrared: New properties and perspectives

3. Will we exceed 50% efficiency in photovoltaics?

4. Sze, S. M., Physics of Semiconductor Devices, 2nd edition, chapter 13, p.750 Fig. 5 (John Wiley and Sons, 1981).

5. ASTM G173-03 Reference Spectra Derived from SMARTS v. 2.9.2, http://rredc.nrel.gov/solar/spectra/

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