Abstract
AbstractAn effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm2 and the open-circuit voltage is 0.28 V. Enhanced light trapping acquired via multiple reflections within the strain and defect free III-nitride nanorod array structures and the short-wavelength responses boosted by the wide bandgap III-nitride constituents are believed to contribute to the observed enhancements in device performance.
Funder
Ministry of Science and Technology, Taiwan
Ministry of Economic Affairs
Publisher
Springer Science and Business Media LLC
Subject
Condensed Matter Physics,General Materials Science
Cited by
4 articles.
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