Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation (Nobel Lecture)-Reference-Cited by-同舟云学术

Growth of GaN on sapphire via low-temperature deposited buffer layer and realization of p-type GaN by Mg doping followed by low-energy electron beam irradiation (Nobel Lecture)

Published:2015-04-28 Issue:5-6 Volume:527 Page:327-333
ISSN:0003-3804
Container-title:Annalen der Physik
language:en
Short-container-title:ANNALEN DER PHYSIK

Author:

Amano Hiroshi¹

Affiliation:

1. Department of Electrical Engineering and Computer Science; Venture Business Laboratory, Akasaki Research Center, Nagoya University; Japan

Publisher

Wiley

Subject

General Physics and Astronomy

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/andp.201500802/fullpdf

Reference61 articles.

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