Fluorinated thin SiO2grown by rapid thermal processing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.103190
Reference6 articles.
1. Dramatic improvement of hot-electron-induced interface degradation in MOS structures containing F or Cl in SiO/sub 2/
2. Surface chemistry of HF passivated silicon: X‐ray photoelectron and ion scattering spectroscopy results
3. Radiation Response of MOS Capacitors Containing Fluorinated Oxides
4. The effect of fluorine in silicon dioxide gate dielectrics
5. Fluorine‐enhanced thermal oxidation of silicon in the presence of NF3
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2. Fluorine-doped SiO2 and fluorocarbon low-k dielectrics investigated by SIMS;Applied Surface Science;2008-12
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4. Influence of vapor phase pre-oxide-cleaning on the oxidation characteristics;Materials Science in Semiconductor Processing;1998-12
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