Carrier control and transport modulation in GaSb/InAsSb core/shell nanowires
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4749283
Reference17 articles.
1. In1−xGaxAs‐GaSb1−yAsyheterojunctions by molecular beam epitaxy
2. InAs-GaSb superlattice energy structure and its semiconductor-semimetal transition
3. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
4. New negative differential resistance device based on resonant interband tunneling
5. High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires
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1. Direct and integrating sampling in terahertz receivers from wafer-scalable InAs nanowires;Nature Communications;2024-01-02
2. Tunable transport properties of dual-gated InAs/GaSb core/shell nanowires;Journal of Applied Physics;2023-02-27
3. Impact of Fringing Field on Shell Radius and Spacer Dielectric on Device Performance of InAs-GaSb Core-Shell Nanowire nTFET;ECS Journal of Solid State Science and Technology;2021-06-01
4. Band structure and end states in InAs/GaSb core-shell-shell nanowires;Physical Review B;2020-11-30
5. Nanowire Field-Effect Transistors;Fundamental Properties of Semiconductor Nanowires;2020-11-17
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