Microtwin formation in gallium arsenide by iron ion implantation and amorphization by annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343897
Reference10 articles.
1. Ion implantation and low‐temperature epitaxial regrowth of GaAs
2. Damage annealing behavior of Se implanted GaAs
3. Epitaxial regrowth of Si implanted (100) and (211) GaAs
4. Argon implantation in GaAs: Damage and lattice site location analyses
5. Annealing of amorphous layer in Si implanted GaAs
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