Damage annealing behavior of Se implanted GaAs
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Reference16 articles.
1. Reordering of implanted amorphous layers in gaas
2. Low‐temperature epitaxial regrowth of ion‐implanted amorphous GaAs
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2. Electrical activation of ion implanted Si in amorphous and crystalline In 0.53 Ga 0.47 As;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-10
3. High resolution transmission electron microscopy of elevated temperature Zn+ implanted and low-power pulsed laser annealed GaAs;Journal of Applied Physics;2000-08-15
4. Formation of Cu nanoparticles in GaAs using MeV ion implantation followed by thermal annealing;Applied Physics A: Materials Science & Processing;1999-06-01
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