Dependence on the Schottky metal and crystal orientation of the Schottky diode characteristics of β‐SiC single crystals grown by chemical vapor deposition-Reference-Cited by-同舟云学术

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Dependence on the Schottky metal and crystal orientation of the Schottky diode characteristics of β‐SiC single crystals grown by chemical vapor deposition

Published:1988-11-15 Issue:10 Volume:64 Page:5020-5025
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Fujii Yoshihisa,Shigeta Mitsuhiro,Furukawa Katsuki,Suzuki Akira,Nakajima Shigeo

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.342454

Reference13 articles.

1. Production of large‐area single‐crystal wafers of cubic SiC for semiconductor devices

2. Epitaxial growth of β-SiC single crystals by successive two-step CVD

3. Schottky barrier diodes on 3C‐SiC

4. The effect of heat treatment on Au Schottky contacts on β-SiC

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1. Towards vertical Schottky diodes on bulk cubic silicon carbide (3C-SiC);Applied Surface Science;2022-12

2. Towards Vertical Schottky Diodes on Bulk Cubic Silicon Carbide (3c-Sic);SSRN Electronic Journal;2022

3. Status and Prospects of Cubic Silicon Carbide Power Electronics Device Technology;Materials;2021-10-05

4. Silicon Nitride Encapsulation to Preserve Ohmic Contacts Characteristics in High Temperature, Oxygen Rich Environments;Materials Science Forum;2015-06

5. Effect of Reduced Pressure on 3C-SiC Heteroepitaxial Growth on Si by CVD;Chemical Vapor Deposition;2006-09

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