Effect of Reduced Pressure on 3C-SiC Heteroepitaxial Growth on Si by CVD
Author:
Publisher
Wiley
Subject
Process Chemistry and Technology,Surfaces and Interfaces,General Chemistry
Link
http://onlinelibrary.wiley.com/wol1/doi/10.1002/cvde.200506464/fullpdf
Reference39 articles.
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2. Long Term Operation of 4.5kV PiN and 2.5kV JBS Diodes
3. Crystal Defects as Source of Anomalous Forward Voltage Increase of 4H-SiC Diodes
4. Effects of n-type 4H-SiC epitaxial wafer quality on reliability of thermal oxides
5. Status and prospects for SiC power MOSFETs
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