Enhanced protection of GaAs against thermal surface degradation by encapsulated annealing in an arsine ambient
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.94982
Reference11 articles.
1. Study of Encapsulants for Annealing GaAs
2. Properties of vacancy defects in GaAs single crystals
3. Nonstoichiometry of Te-Doped GaAs
4. EFFECT OF ARSENIC PRESSURE ON HEAT TREATMENT OF LIQUID EPITAXIAL GaAs
5. Capless anneal of ion‐implanted GaAs in controlled arsenic vapor
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1. Open-tube solid-state diffusion of Zn into n-type GaAs0.35P0.65 from ZnO oxide films and electroluminescence;Journal of Applied Physics;1998-02
2. On the high speed modulation bandwidth of quantum well lasers;Applied Physics Letters;1992-01-20
3. Rapid thermal annealing of MIS GaAs schottky barriers;Physica Status Solidi (a);1991-10-16
4. Ga out‐diffusion in rapid‐thermal‐processed GaAs with SiO2encapsulants;Journal of Applied Physics;1991-03-15
5. Stable solid-phase contact to n-GaAs;IEEE Transactions on Electron Devices;1989-06
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