Experimentally investigating the degradations of small-signal gain for a GaN class-AB dual-band power amplifier under high temperature and humidity conditions-Reference-Cited by-同舟云学术

Experimentally investigating the degradations of small-signal gain for a GaN class-AB dual-band power amplifier under high temperature and humidity conditions

Published:2020-12-01 Issue:12 Volume:10 Page:125219
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Zhou Shaohua¹^ORCID

Affiliation:

1. School of Microelectronics, Tianjin University, Tianjin 300072, China

Funder

National Key R&D Program of China

Aoshan Talents Outstanding Scientist Program

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/5.0036424

Reference23 articles.

1. 1.29-W/mm2 23-dBm 66-GHz Power Amplifier in 55-nm SiGe BiCMOS With In-Line Coplanar Transformer Power Splitters and Combiner

2. A 4–32 GHz SiGe Multi-Octave Power Amplifier With 20 dBm Peak Power, 18.6 dB Peak Gain and 156% Power Fractional Bandwidth

3. A Compact 140-GHz, 150-mW High-Gain Power Amplifier MMIC in 250-nm InP HBT

4. An X-Band Switchless Bidirectional GaN MMIC Amplifier for Phased Array Systems

5. A Compact, Wideband, and Temperature Robust 67–90-GHz SiGe Power Amplifier With 30% PAE

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4. Temperature Reliability Exploration of GaN HEMT E/F3 Power Amplifier;2022 IEEE MTT-S International Wireless Symposium (IWS);2022-08-12

5. Experimental Investigation of Relationship between Humidity Conditions and Degradation of Key Specifications of 0.1–1.2 GHz PA in 0.18 μm CMOS;Micromachines;2022-07-22