A lost cost broadband GaAs pHEMT low noise amplifier
Author:
Affiliation:
1. Qinghai Minzu University,College of Physics and Electronic Information Engineer,Xining,China,810007
2. Chengdu Ganide Technology,Chengdu,China,610073
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10275796/10276388/10276426.pdf?arnumber=10276426
Reference10 articles.
1. A Cryogenic Broadband Sub-1-dB NF CMOS Low Noise Amplifier for Quantum Applications
2. Experimentally investigating the degradations of small-signal gain for a GaN class-AB dual-band power amplifier under high temperature and humidity conditions
3. Investigation on Temperature Behavior for a GaAs E-pHEMT MMIC LNA
4. Experimentally investigating the performance degradations of the CMOS PA at different temperatures;zhao;AIP Adv,2021
5. Performance Degradation Investigation for a GaAs PHEMT High Gain MMIC PA Taking into Account the Temperature
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