12 W continuous-wave diode lasers at 1120 nm with InGaAs quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1405812
Reference11 articles.
1. $\bf In_{0.38}Ga_{0.62}As$/InAlGaAs/InGaP Strained Double Quantum Well Lasers on $\bf In_{0.21}Ga_{0.79}As$ Ternary Substrate
2. 1.17-μm highly strained GaInAs-GaAs quantum-well laser
3. Effect of growth conditions and strain compensation on indium incorporation for diode lasers emitting above 1050nm
4. Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)
5. Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate
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