Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)-Reference-Cited by-同舟云学术

Investigations of (GaIn)(NAs) bulk layers and (GaIn)(NAs)/GaAs multiple quantum well structures grown using tertiarybutylarsine (TBAs) and 1,1-dimethylhydrazine (UDMHy)

Published:1998-12 Issue:1-4 Volume:195 Page:391-396
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Höhnsdorf F.,Koch J.,Agert C.,Stolz W.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference9 articles.

1. Band Gap Energy and Band Lineup of III-V Alloy Semiconductors Incorporating Nitrogen and Boron

2. Giant and Composition-Dependent Optical Bowing Coefficient in GaAsN Alloys

3. Localization and percolation in semiconductor alloys: GaAsN vs GaAsP

4. Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance

5. Room temperature continuous-wave photopumped operation of 1.22 [micro sign]m GaInNAs/GaAs single quantum well vertical-cavity surface-emitting laser

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