Quantitative evaluation of biaxial strain in epitaxial 3C-SiC layers on Si(100) substrates by Raman spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1427408
Reference13 articles.
1. High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor
2. Spatial Uniformity of the Mechanical Properties of 3C-SiC Films Grown on 4-Inch Si Wafers as a Function of Film Growth Conditions
3. Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films
4. Raman determination of layer stresses and strains for heterostructures and its application to the cubic SiC/Si system
5. Relaxation of interfacial stress and improved quality of heteroepitaxial 3C–SiC films on (100)Si deposited by organometallic chemical vapor deposition at 1200 °C
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