Recombination transitions in Zn–N‐doped GaAs1−xPx in the direct and indirect composition regions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1663320
Reference18 articles.
1. The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent Diodes
2. The luminescent properties of nitrogen doped GaAsP light emitting diodes
3. Stimulated Emission Involving the Nitrogen Isoelectronic Trap in GaAs1−xPx
4. Stimulated Emission in an Indirect Semiconductor: N Isoelectronic Trap‐Assisted Recombination in GaAs1−xPx (x > 0.44)
5. Stimulated Emission and Laser Operation (cw, 77°K) of Direct and Indirect GaAs1−xPx on Nitrogen Isoelectronic Trap Transitions
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1. Chapter 1 Photopumped III-V Semiconductor Lasers;Semiconductors and Semimetals;1979
2. Observation of the upper branch (N′Γ) of the nitrogen isoelectronic trap in GaAs1−yPy;Journal of Applied Physics;1977-05
3. Stimulated emission on Nx(’’A‐line’’) recombination transitions in nitrogen‐implanted GaAs1−xPx(x≈0.37);Applied Physics Letters;1976-06-15
4. Light-Emitting Devices, Part I: Methods;Advances in Electronics and Electron Physics;1976
5. Heterojunction laser operation of GaAs1−xPx : N on NN‐pair (ENN) andA‐line (EN) transitions near the direct (Γ) band edge;Journal of Applied Physics;1975-11
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