Stimulated Emission and Laser Operation (cw, 77°K) of Direct and Indirect GaAs1−xPx on Nitrogen Isoelectronic Trap Transitions
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1661505
Reference28 articles.
1. SEMICONDUCTOR MASER OF GaAs
2. SEMICONDUCTOR MASER OF GaAs
3. SEMICONDUCTOR MASER OF GaAs
4. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS
5. Interband Transitions and Maser Action
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Intervalley Coupling;Springer Series in Solid-State Sciences;1996
2. Laser oscillation involving nitrogen isoelectronic impurities in indirect‐gap AlxGa1−xAs (x=0.46, 2 °K);Applied Physics Letters;1976-12
3. Stimulated and laser emission involving nitrogen isoelectronic impurities in AlxGa1−xAs (x=0.39, 77 °K);Applied Physics Letters;1976-09
4. Differential Photovoltage Spectra of Au-GaAs1-xPxSchottky-Barrier Diodes;Japanese Journal of Applied Physics;1976-05
5. Optical pumping in nitrogen-doped GaP;Physical Review B;1975-10-15
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