Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1707212
Reference28 articles.
1. Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy
2. Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy
3. Much improved interfaces in GaAs/AlAs quantum wells grown on (411)A GaAs substrates by molecular-beam epitaxy
4. Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy
5. Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (4 1 1)A GaAs substrates and its room-temperature operation
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