Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs (411)A substrates by molecular beam epitaxy

Published:1995-05 Issue: Volume:150 Page:409-414
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Shimomura Satoshi,Kaneko Shinjiroh,Motokawa Takeharu,Shinohara Keisuke,Adachi Akira,Okamoto Yasunori,Sano Naokatsu,Murase Kazuo,Hiyamizu Satoshi

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy

2. Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy

3. Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothing

4. Dynamics of film growth of GaAs by MBE from Rheed observations

5. Cathodoluminescence atomic scale images of monolayer islands at GaAs/GaAlAs interfaces

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Improvement of self-organized InAs quantum dots growth by molecular beam epitaxy;Journal of Crystal Growth;2005-03

2. Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface;Journal of Applied Physics;2004-06-15

3. Photoreflectance characterization of GaAs/AlAs quantum wells with super-flat interfaces grown by molecular beam epitaxy;Physica E: Low-dimensional Systems and Nanostructures;2004-03

4. InAs/GaAs self-organized quantum dots on (411)A GaAs by molecular beam epitaxy;Journal of Crystal Growth;2001-07

5. Use of excitons in materials characterization of semiconductor system;Materials Science and Engineering: R: Reports;2001-07

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