Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (4 1 1)A GaAs substrates and its room-temperature operation-Reference-Cited by-同舟云学术

Fabrication of InGaAs vertical-cavity surface-emitting lasers by molecular beam epitaxy on (4 1 1)A GaAs substrates and its room-temperature operation

Published:1997-05 Issue: Volume:175-176 Page:359-364
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Hanamaki Yoshihiko,Takeuchi Tetsuya,Ogasawara Nagaatsu,Shiraki Yasuhiro

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference10 articles.

1. Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam Epitaxy

2. Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy

3. Room‐temperature continuous wave lasing characteristics of a GaAs vertical cavity surface‐emitting laser

4. High‐efficiency TEM00continuous‐wave (Al,Ga)As epitaxial surface‐emitting lasers and effect of half‐wave periodic gain

5. Low-threshold electrically pumped vertical-cavity surface-emitting microlasers

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1. Structure and morphology of the As-rich and the stoichiometric GaAs(114)A surface;Journal of Applied Physics;2004-06-15

2. Structure of high-index GaAs surfaces - the discovery of the stable GaAs (2 5 11) surface;Applied Physics A: Materials Science & Processing;2002-07-01

3. Effects of high index plane on device performances of near-infrared InGaAs/GaAs/AlGaAs resonant-cavity light-emitting diodes;IEE Proceedings - Optoelectronics;2000-02-01

4. Vertical-Cavity Surface-Emitting Lasers with Stable Polarization Grown on (411)A-Oriented GaAs Substrates;Japanese Journal of Applied Physics;1999-08-01

5. High index surfaces grow novel devices;III-Vs Review;1998-05