Photoemission studies of molecular beam epitaxially grown GaAs (001) surfaces exposed to a nitrogen plasma
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332578
Reference9 articles.
1. Effect of native oxide on the interface property of GaAs MIS structures
2. Improvements in GaAs/plasma‐deposited silicon nitride interface quality by predeposition GaAs surface treatment and postdeposition annealing
3. Interactions between H2and N2plasmas and a GaAs(100) surface: Chemical and electronic properties
4. Angle-resolved photoemission from As-stable GaAs (001) surfaces prepared by MBE
5. Design and performance of a toroidal grazing incidence monochromator for the 20 – 200 eV photon energy range
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1. Real Time Infra-Red Absorption Analysis of Nitridation of GaAs(001) by Hydrazine Solutions;Journal of The Electrochemical Society;2013
2. Chemistry of Wet Treatment of GaAs(111)B and GaAs(111)A in Hydrazine-Sulfide Solutions;Journal of The Electrochemical Society;2011
3. GaAs(111)AandBsurfaces in hydrazine sulfide solutions: Extreme polarity dependence of surface adsorption processes;Physical Review B;2009-12-18
4. Effect of sidewall passivation in BCl[sub 3]∕N[sub 2] inductively coupled plasma etching of two-dimensional GaAs photonic crystals;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2009
5. Study of the chemical and morphological evolution of the GaAs surface after high fluence focused ion beam exposure;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2004-05
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