Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures-Reference-Cited by-同舟云学术

Effect of poling process on resistive switching in Au/BiFeO3/SrRuO3 structures

Published:2016-12-19 Issue:25 Volume:109 Page:252901
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Zhu Hui¹,Zhang Yingqiao¹,Jiang Anquan²,Bai Zilong²,Feng Shiwei¹,Wang Pengfei¹,Meng Xiao¹,Qi Qiong³

Affiliation:

1. College of Electronic Information and Control Engineering, Beijing University of Technology, Beijing 100124, People's Republic of China

2. College of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China

3. National Engineering Research Center for Optoelectronics Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, People's Republic of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Reference26 articles.

1. Flexible Hybrid Organic–Inorganic Perovskite Memory

2. A Resistive Memory in Semiconducting BiFeO3 Thin-Film Capacitors

3. Direct observation of conducting filaments on resistive switching of NiO thin films

4. Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

5. Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory

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