Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on AlN/sapphire template
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3231443
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1. III–Nitride UV Devices
2. High quantum efficiency AlGaN solar-blind p-i-n photodiodes
3. 30-W/mm GaN HEMTs by Field Plate Optimization
4. Improved Power Performance for a Recessed-Gate AlGaN–GaN Heterojunction FET With a Field-Modulating Plate
5. Defect structure of metal‐organic chemical vapor deposition‐grown epitaxial (0001) GaN/Al2O3
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1. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280nm;Journal of Crystal Growth;2015-12
2. A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure;Advanced Materials;2013-12-06
3. Determining polarity and dislocation core structures at atomic level for epitaxial AlN/(0001)6H-SiC from a single image in HRTEM;Ultramicroscopy;2013-03
4. Enhanced performance of InGaN solar cell by using a super-thin AlN interlayer;Applied Physics Letters;2011-10-17
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