A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure-Reference-Cited by-同舟云学术

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A Multilevel Intermediate-Band Solar Cell by InGaN/GaN Quantum Dots with a Strain-Modulated Structure

Published:2013-12-06 Issue:9 Volume:26 Page:1414-1420
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Sang Liwen¹²,Liao Meiyong³,Liang Qifeng³,Takeguchi Masaki³,Dierre Benjamin¹,Shen Bo⁴,Sekiguchi Takashi³,Koide Yasuo³,Sumiya Masatomo³

Affiliation:

1. International Center for Young Scientists (ICYS), National Institute for Materials Science (NIMS); Tsukuba Ibaraki 305-0044 Japan

2. JST-PRESTO, Japan Science and Technology Agency; Chiyoda Tokyo 102-0076 Japan

3. National Institute for Materials Science (NIMS); 1-1 Namiki Tsukuba Ibaraki 305-0044 Japan

4. School of Physics; Peking University; Beijing 100871 China

Funder

Japan Science and Technology Agency

Japanese Society for the Promotion of Science

MEXT

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/adma.201304335/fullpdf

Reference50 articles.

1. Recent Progress in GaN-Based Light-Emitting Diodes

2. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

3. Visible-Color-Tunable Light-Emitting Diodes

4. Unusual properties of the fundamental band gap of InN

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1. Optical absorption spectra of GaSb/GaAs quantum-ring-with-dot structures and their potential for intermediate band solar cells;Journal of Physics D: Applied Physics;2023-07-28

2. Polar-surface-dominated zigzag GaN nanowires with alternate H2 and O2 evolution sites for photocatalytic overall water splitting;Applied Catalysis A: General;2023-03

3. InGaN Quantum Dot Superlattices as Ratchet Band Solar Cells;IEEE Journal of Photovoltaics;2022-03

4. High‐pressure MOCVD growth of InGaN thick films toward the photovoltaic applications;Fundamental Research;2021-12

5. Polarization-induced hole doping for long-wavelength In-rich InGaN solar cells;Applied Physics Letters;2021-11-15

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