Low threshold, wafer fused long wavelength vertical cavity lasers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.111913
Reference11 articles.
1. 144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates
2. GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode
3. Room temperature pulsed operation of 1.5 mu m GaInAsP/InP vertical-cavity surface-emitting laser
4. Wafer fusion: A novel technique for optoelectronic device fabrication and monolithic integration
5. Bonding by atomic rearrangement of InP/InGaAsP 1.5 μm wavelength lasers on GaAs substrates
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