GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode-Reference-Cited by-同舟云学术

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GaInAsP/InP Semiconductor Multilayer Reflector Grwon by Metalorganic Chemical Vapor Deposition and its Application to Surface Emitting Laser Diode

Published:1990-07-20 Issue:Part 2, No. 7 Volume:29 Page:L1130-L1132
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Imajo Yoshihiro,Kasukawa Akihiko,Kashiwa Susumu,Okamoto Hiroshi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 33 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Optical Sources for Telecommunication;The Communications Handbook;2002-04-29

2. Long-Wavelength Laser Source;WDM Technologies;2002

3. All-Epitaxial Single-Fused 1.55 µm Vertical Cavity Laser Based on an InP Bragg Reflector;Japanese Journal of Applied Physics;1999-02-28

4. Near room-temperature continuous-wave operation of electrically pumped 1.55 [micro sign]m vertical cavity lasers with InGaAsP/InP bottom mirror;Electronics Letters;1999

5. Surface-Emitting Lasers;Semiconductor Lasers II;1999

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