The heteroepitaxial growth of ZnSe on GaP and GaAs substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.338359
Reference8 articles.
1. Growth and characterization of heteroepitaxial zinc selenide
2. The growth and photoluminescence of ZnSe on GaAs by VPE in the temperature range 300–500°C
3. Liquid-phase epitaxy of ZnSe from Zn-Ga solution
4. Vapor Phase Epitaxial Growth of ZnSe Films Using Metallic Zn and Metallic Se
5. Heteroepitaxial growth of ZnSe by a close-spaced technique: Ga incorporation and morphology
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Dependence of substrate materials on the growth of ZnS on GaAs and GaP substrates;Journal of Crystal Growth;1989-04
2. Effect of substrate materials in the growth of ZnSe on GaAs and GaP substrates;Journal of Applied Physics;1988-08
3. II-VI — Semiconductors: Particular features and applications;Annales des Télécommunications;1988-07
4. The Effects of Iodine-Doping on the Hetero-Epitaxial Growth of ZnS on GaP Substrates;Japanese Journal of Applied Physics;1988-01-20
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