Heteroepitaxial growth of ZnSe by a close-spaced technique: Ga incorporation and morphology
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference35 articles.
1. Variation with composition of theE0andE0+Δ0gaps inZnSxSe1−xalloys
2. Epitaxial ZnSe on GaAs and Ge by HBr transport
3. Vapor-Phase Epitaxial Growth and Some Properties of ZnSe, ZnS, and CdS
4. Vapor Phase Epitaxial Growth of ZnSe Films Using Metallic Zn and Metallic Se
5. Epitaxial Growth of ZnSe on GaAs
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Morphology and rotation twin in ZnSe on GaAs (111);Journal of Materials Science;1993-01-01
2. Growth of ZnSe on GaAs by close spaced vapor transport;Materials Science and Engineering: B;1992-09
3. Growth of semiconductors by the close-spaced vapor transport technique: A review;Journal of Materials Research;1988-10
4. Secondary ion mass spectrometry studies of Al, Ga, and In unintentional donors in ZnSe epilayers on GaAs;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1987-09
5. The heteroepitaxial growth of ZnSe on GaP and GaAs substrates;Journal of Applied Physics;1987-05-15
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