Improved silicon surface passivation achieved by negatively charged silicon nitride films
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3077157
Reference18 articles.
1. Experimental evidence of parasitic shunting in silicon nitride rear surface passivated solar cells
2. Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3
3. Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3
4. Electron-nuclear double-resonance and electron-spin-resonance study of silicon dangling-bond centers in silicon nitride
5. Nature of the dominant deep trap in amorphous silicon nitride
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