Impact of SiNx capping on the formation of source/drain contact for In-Ga-Zn-O thin film transistor with self-aligned gate
Author:
Affiliation:
1. ICT Materials and Components Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305-700, South Korea
Funder
Ministry of science and ICT
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5011079
Reference15 articles.
1. Self-Aligned Coplanar a-IGZO TFTs and Application to High-Speed Circuits
2. High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
3. MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region
4. Coplanar homojunction a-InGaZnO thin film transistor fabricated using ultraviolet irradiation
5. Unusual instability mode of transparent all oxide thin film transistor under dynamic bias condition
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1. Scaling study of contact operation at constant current in self-aligned top-gated oxide semiconductor field-effect transistors;Solid-State Electronics;2022-09
2. P‐21: Student Poster: Indium‐Gallium‐Zinc Oxide Thin‐Film Transistors for High‐Resolution Active‐Matrix Ferroelectric Liquid‐Crystal Displays;SID Symposium Digest of Technical Papers;2022-06
3. Submicrometer Top-Gate Self-Aligned a-IGZO TFTs by Substrate Conformal Imprint Lithography;IEEE Transactions on Electron Devices;2019-04
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