MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region-Reference-Cited by-同舟云学术

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MOSFET-Like Behavior of a-InGaZnO Thin-Film Transistors With Plasma-Exposed Source–Drain Bulk Region

Published:2009-12 Issue:12 Volume:5 Page:495-500
ISSN:1551-319X
Container-title:Journal of Display Technology
language:
Short-container-title:J. Display Technol.

Author:

Jeong Jaewook,Hong Yongtaek,Jeong Jae Kyeong,Park Jin-Seong,Mo Yeon-Gon

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/9425/5331937/05331938.pdf?arnumber=5331938

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Theoretical Modeling of a Temperature-Dependent Threshold-Voltage Shift in Self-Aligned Coplanar IZTO Thin-Film Transistors;ACS Applied Electronic Materials;2023-05-16

3. Interface engineering to enhance charge carrier injection in Ph-BTBT-10 organic thin-film transistor with silver source-drain electrodes;Molecular Crystals and Liquid Crystals;2023-02-14

4. Analysis on Contact Resistance and Effective Channel Length of Thin Film Transistors Using Composition-Modified In–Ga–Zn-O Active Channels Prepared with Atomic Layer Deposition and Various Electrode Materials;ACS Applied Electronic Materials;2022-12-09

5. Mobility Enhancement and Abnormal Humps in Top-Gate Self-Aligned Double-Layer Amorphous InGaZnO TFTs;IEEE Journal of the Electron Devices Society;2022

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