Coplanar homojunction a-InGaZnO thin film transistor fabricated using ultraviolet irradiation
Author:
Affiliation:
1. Department of Information Display Engineering
2. Hanyang University
3. Seoul 133-791
4. Korea
5. Department of Materials Science and Engineering
6. Display R & D Center
7. Samsung Display Co., Ltd.
8. Yongin
Abstract
A novel technique for formation of thermally-stable IGZO homojunction with highly conductivity by UV light irradiation.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA16443E
Reference19 articles.
1. Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor
2. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering
3. Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter
4. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
5. Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer
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