Performance Enhancement of Self-Aligned Coplanar TFTs With ALD-IGZO Channels via Effective Doping From Interlayer Dielectric
Author:
Affiliation:
1. Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin-si, South Korea
2. NCD Company Ltd., Daejeon, South Korea
Funder
Technology Innovation Program (Development of non-planar TFT structures and processes for ultra high resolution display) funded by the Ministry of Trade, Industry and Energy (MOTIE), South Korea
National Research Foundation of Korea (NRF) Grant funded by the Korea Government Ministry of Science and ICT
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10168002/10122708.pdf?arnumber=10122708
Reference12 articles.
1. Self-Aligned Top-Gate Amorphous Zinc-Tin Oxide Thin-Film Transistor With Source/Drain Regions Doped by Al Reaction
2. Stability Behavior of Self-Aligned Coplanar a-IGZO Thin Film Transistors Fabricated by Deep Ultraviolet Irradiation
3. Numerical comparisons of the operational degradation of ferroelectric field-effect transistors using Hf–Zr–O thin films by charge pumping technique
4. Performance Improvement of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors by Boron Implantation
5. A Novel Amorphous InGaZnO Thin Film Transistor Structure without Source/Drain Layer Deposition
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Impact of Al2O3 spacers on the improvement in short-channel effects for the mesa-shaped vertical-channel In-Ga-Zn-O thin-film transistors with a channel length below 100 nm;Materials Science in Semiconductor Processing;2024-03
2. Light Effect on Amorphous Tin Oxide Thin‐Film Transistors;Advanced Photonics Research;2024-01-26
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