Performance Improvement of Self-Aligned Coplanar Amorphous Indium–Gallium–Zinc Oxide Thin-Film Transistors by Boron Implantation
Author:
Affiliation:
1. School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
2. LG Display Co., Ltd., 245, LG-ro, Wollong-myeon, Paju-si 10845, Gyeonggi-do, Republic of Korea
Funder
LG Display
National Research Foundation of Korea
Publisher
American Chemical Society (ACS)
Subject
Materials Chemistry,Electrochemistry,Electronic, Optical and Magnetic Materials
Link
https://pubs.acs.org/doi/pdf/10.1021/acsaelm.2c00196
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1. Impact of high-resolution matrix backlight on local-dimming performance and its characterization
2. A review of highly reliable flexible encapsulation technologies towards rollable and foldable OLEDs
3. Reliability improvement of IGZO‐TFT in hybrid process with LTPS
4. Evaluation of Off-State Current Characteristics of Transistor Using Oxide Semiconductor Material, Indium–Gallium–Zinc Oxide
5. High refresh rate and low power consumption AMOLED panel using top‐gate n‐oxide and p‐LTPS TFTs
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