Composition and its impact on shape evolution in dislocated Ge(Si)/Si islands
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1290384
Reference18 articles.
1. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)
2. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)
3. Comparison of the electronic structure ofInAs/GaAspyramidal quantum dots with different facet orientations
4. Absorption spectra and optical transitions in InAs/GaAs self-assembled quantum dots
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1. Study of intermixing effects in Ge/Si(001) growth using kinetic Monte Carlo simulations;Journal of Crystal Growth;2022-04
2. Impact of Ge deposition temperature on parameters of c-Si solar cells with surface texture formed by etching of Si using SiGe islands as a mask;Materials Science in Semiconductor Processing;2020-08
3. Superior optical (λ ∼ 1550 nm) emission and detection characteristics of Ge microdisks grown on virtual Si0.5Ge0.5/Si substrates using molecular beam epitaxy;Nanotechnology;2019-12-23
4. Impact of size distributions of Ge islands as etching masks for anisotropic etching on formation of anti-reflection structures;Japanese Journal of Applied Physics;2019-03-26
5. Strain-induced Ge segregation on Si at high temperatures;Journal of Crystal Growth;2015-03
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