GaN doped with neodymium by plasma-assisted molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2844850
Reference11 articles.
1. Luminescent Materials
2. Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials
3. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
4. Photonic Applications of Rare-Earth-Doped Materials
5. Preparation of high-dispersity MCo2O4 (M = Mg, Ni, Zn) spinels by thermal dissociation of coprecipitated oxalates
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