The effect of potential fluctuations on the optical properties of InGaAs∕InGaAlAs single and coupled double quantum wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2260826
Reference38 articles.
1. Studies of two-subband occupied electron gas in modulation-doped In0.52Al0.48As/In0.53Ga0.47As single quantum well by far-infrared modulated photoluminescence
2. Photoreflectance characterization of an AlInAs/GaInAs heterojunction bipolar transistor structure with a chirped superlattice
3. Irradiation effects in InGaAs/InAlAs high electron mobility transistors
4. Characterization of high indium content metamorphic InGaAs/InAlAs modulation-doped heterostructures
5. Photoreflectance and photoluminescence spectroscopy of the lattice-matched InGaAs/InAlAs single quantum well
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